dynex semiconductor limited, doddington road, linco ln, united kingdom, ln6 3lf tel: +44-(0)1522-500500 fax: +44-(0)1522-500550 www.dynexsemi.com registered in england and wales: no 3824626 registe red office: doddington road, lincoln, united kingdo m, ln6 3lf DIM400XSM65-K000 single switch igbt module ds5808-1.1 october 2005 (ln24289) features high thermal cycling capability soft punch through silicon isolated mmc base with aln substrates applications high reliability inverters motor controllers traction auxiliaries the powerline range of high power modules includes half bridge, chopper, dual, single and bi-directional sw itch configurations covering voltages from 600v to 6500v and currents up to 2400a. the DIM400XSM65-K000 is a single switch 6500v,n channel enhancement mode, insulated gate bipolar transistor (igbt) module. the igbt has a wide rever se bias safe operating area (rbsoa ) . this device is optimised for traction drives and other application s requiring high thermal cycling capability. the module incorporates an electrically isolated ba se plate and low inductance construction enabling circuit de signers to optimise circuit layouts and utilise grounded he at sinks for safety . ordering information order as: DIM400XSM65-K000 note: when ordering, please use the complete part n umber key parameters v ces 6500v v ce(sat) * (typ) 4.0v i c (max) 400a i c(pk) (max) 800a *(measured at the power busbars and not the auxilia ry terminals) fig. 1 single switch circuit diagram fig. 2 electrical connections - (not to scale)
DIM400XSM65-K000 2 / 8 caution: this device is sensitive to electrostatic discharge. users should follow esd handling procedu res. www.dynexsemi.com absolute maximum ratings stresses above those listed under 'absolute maximum ratings' may cause permanent damage to the device. in extreme conditions, as with all semiconductors, this may in clude potentially hazardous rupture of the package. appropriate safety precautions should always be followed. expos ure to absolute maximum ratings may affect device r eliability. t case = 25c unless stated otherwise symbol parameter test conditions max. units v ces collector-emitter voltage v ge =0v, t vj = -40 c 5800 v v ge =0v 6300 v v ge =0v, t vj = 125 c 6500 v v ges gate-emitter voltage 20 v i c continuous collector current t case =90 c 400 a i c(pk) peak collector current 1ms, t case =115 c 800 a p max max.transistor power dissipation t case =25 c, t j =150 c 8.3 kw i 2 t diode i 2 t value (diode arm) v r =0,t p =10ms,t vj =125 c 97 ka 2 s v isol isolation voltage-per module commoned terminals to b ase plate. ac rms,1 min,50hz 10.2 kv q pd partial discharge-per module iec1287.v 1 =7000v, v 2 =5100v, 50hz rms 10 pc thermal and mechanical ratings internal insulation material: aln baseplate material: alsic creepage distance: 56mm clearance: 26mm cti (critical tracking index): >600 symbol parameter test conditions min typ. max units r th(j-c) thermal resistance -transistor (per switch) continuo us dissipation - junction to case - 15 c/kw r th(j-c) thermal resistance -diode (per switch) continuous di ssipation - junction to case - 30 c/kw r th(c-h) thermal resistance -case to heatsink (per module) mounting torque 5nm (with mounting grease) - 8 c/kw t j junction temperature transistor - - 125 c diode - - 125 c t stg storage temperature range - -40 - 125 c screw torque mounting m6 - - 5 nm electrical connections -m4 - - 2 nm electrical connections -m8 - - 10 nm
DIM400XSM65-K000 caution: this device is sensitive to electrostatic discharge. users should follow esd handling procedu res 3 / 8 www.dynexsemi.com electrical characteristics t case = 25c unless stated otherwise. symbol parameter test conditions min typ max units i ces collector cut-off current v ge =0v,v ce =v ces 3 ma v ge =0v,v ce =v ces ,t case =125 c 60 ma i ges gate leakage current v ge = 20v,v ce =0v 8 ua v ge(th) gate threshold voltage i c =80ma,v ge =v ce 5.5 6.5 7.5 v v ce(sat) ? collector-emitter saturation voltage v ge =15v,i c =400a 4.0 v v ge =15v,i c =400a,,t vj =125 c 5.6 v i f diode forward current dc 400 a i fm diode maximum forward current t p =1ms 800 a v f diode forward voltage i f =400a 3.6 v i f =400a,t vj =125 c 4.1 v c ies input capacitance v ce =25v,v ge =0v,f =1mhz 120 nf c res reverse transfer capacitance v ce =25v,v ge =0v,f =1mhz 1.5 nf l m module inductance -- 20 nh r int internal transistor resistance 0.18 m w sc data short circuit.i sc t j 125 c,v cc 4400v, i 1 tbd a t p = 10 us, i 2 v ce(max) =v ces C l*.di/dt iec 60747-9 tbd a note: ? measured at the power busbars and not the auxiliary terminals l*is the circuit inductance + l m
DIM400XSM65-K000 4 / 8 caution: this device is sensitive to electrostatic discharge. users should follow esd handling procedu res. www.dynexsemi.com electrical characteristics t case = 25c unless stated otherwise symbol parameter test conditions min typ. max units t d(off) turn-off delay time i c =400a 6.0 us t f fall time v ge =15v 250 ns e off turn-off energy loss v ce =3600v 1450 mj t d(on) turn-on delay time r g(on) =6.2 w r g(off) =18 w 900 ns t r rise time c ge =44nf 250 ns e on turn-on energy loss l ~200nh 3000 mj q g gate charge 8 uc q rr diode reverse recovery charge i f =400a,v ce =3600v, 700 uc i rr diode reverse recovery current di f /dt =1300a/us 300 a e rec diode reverse recovery energy 1300 mj t case = 125c unless stated otherwise symbol parameter test conditions min typ. max units t d(off) turn-off delay time i c =400a 6.0 us t f fall time v ge =15v 250 ns e off turn-off energy loss v ce =3600v 1750 mj t d(on) turn-on delay time r g(on) =6.2 w r g(off) =18 w 700 ns t r rise time c ge =44nf 200 ns e on turn-on energy loss l ~200nh 3500 mj q rr diode reverse recovery charge i f =400a,v ce =3600v, 1000 uc i rr diode reverse recovery current di f /dt =1600a/us 370 a e rec diode reverse recovery energy 2000 mj
DIM400XSM65-K000 caution: this device is sensitive to electrostatic discharge. users should follow esd handling procedu res 5 / 8 www.dynexsemi.com 0 1 0 0 2 0 0 3 0 0 4 0 0 5 0 0 6 0 0 7 0 0 8 0 0 0 .0 1 .0 2 .0 3 . 0 4 . 0 5 .0 6 .0 7 .0 8 . 0 c o lle c to r - e m itte r v o lt a g e , v c e - ( v ) collector current, ic - (a) v g e = 1 0 v v g e = 1 2 v v g e = 1 5 v v g e = 2 0 v c o m m o n e m itte r t c a s e = 2 5 'c v c e is m e a s u r e d a t p o w e r b u s b a r a n d n o t a u x ilia r y t e r m in a ls 0 100 200 300 400 500 600 700 800 0.0 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0 10.0 collector-emitter voltage, vce - (v) collector current, ic - (a) vge=10v vge=12v vge=15v vge=20v common emitter tcase = 125'c vce is measured at power busbar and not auxiliary terminals fig.3 typical output characteristics fig.4 typical o utput characteristics 0 1 0 0 0 2 0 0 0 3 0 0 0 4 0 0 0 0 1 0 0 2 0 0 3 0 0 4 0 0 c o lle c to r c u rre n t, ic - (a ) switching energy, esw - (mj) e o ff e o n e re c c o n d itio n s : t c a s e = 1 2 5 'c v c e = 3 6 0 0 v r g (o n ) = 6 .2 o h m s r g (o ff) = 1 8 o h m s c g e = 4 4 n f . v g e = + /- 1 5 v . 0 1 0 0 0 2 0 0 0 3 0 0 0 4 0 0 0 5 0 0 0 6 0 0 0 7 0 0 0 8 0 0 0 0 1 0 2 0 3 0 4 0 5 0 6 0 7 0 g a te re s is ta n c e , r g - (o h m s ) switching energy, esw - (mj) e o ff e o n e r e c c o n d itio n s : t c a s e = 1 2 5 'c ic = 4 0 0 a v c e = 3 6 0 0 v c g e = 4 4 n f v g e = + /- 1 5 v fig.5 typical switching energy vs collector current fig.6 typical switching energy vs gate resistance
DIM400XSM65-K000 6 / 8 caution: this device is sensitive to electrostatic discharge. users should follow esd handling procedu res. www.dynexsemi.com 0 1 0 0 2 0 0 3 0 0 4 0 0 5 0 0 6 0 0 7 0 0 8 0 0 0 .0 1 .0 2 .0 3 .0 4 .0 5 .0 6 .0 f o r w a r d v o lta g e , v f - ( v ) forward current, if - (a) 2 5 o c 1 2 5 o c 0 1 0 0 2 0 0 3 0 0 4 0 0 5 0 0 6 0 0 7 0 0 8 0 0 9 0 0 2 0 0 0 3 0 0 0 4 0 0 0 5 0 0 0 6 0 0 0 7 0 0 0 c o lle c to r e m itte r v o lta g e , v c e - (v ) collector current, ic - (a) t v j= 1 2 5 c t v j= 2 5 c c o n d itio n s : r g o ff= 1 8 w c g e = 4 4 n f v g e = 1 5 v v c c = 4 4 0 0 v fig.7 diode typical forward characteristics fig.8 re verse bias safe operating area 1 1 0 1 0 0 0 . 0 0 1 0 . 0 1 0 . 1 1 1 0 p u l s e t i m e , t p - ( s ) transient thermal impedance, zth(j-c) - ('c/kw) r t h i g b t r t h d i o d e 0 1 0 0 2 0 0 3 0 0 4 0 0 5 0 0 6 0 0 7 0 0 8 0 0 9 0 0 0 1 0 0 0 2 0 0 0 3 0 0 0 4 0 0 0 5 0 0 0 6 0 0 0 r e v e r s e v o lta ge , v r - (v ) reverse recovery current, irr - (a) t j= 1 2 5 c 1 2 3 4 i g b t r i ( c / k w ) 0 . 5 7 2 . 6 3 4 . 5 5 7 . 3 2 t i ( m s ) 0 . 1 7 8 . 0 8 5 1 . 9 2 2 8 0 . 5 d i o d e r i ( c / k w ) 1 . 1 3 5 . 2 7 9 . 1 1 4 . 6 4 t i ( m s ) 0 . 1 7 8 . 0 8 5 1 . 9 2 2 8 0 . 5 fig.9 diode reverse bias safe operating area fig.10 transient thermal impedance
DIM400XSM65-K000 caution: this device is sensitive to electrostatic discharge. users should follow esd handling procedu res 7 / 8 www.dynexsemi.com package details for further package information, please visit our w ebsite or contact customer services. all dimension s in mm, unless stated otherwise. do not scale. nominal weight: 1100g module outline type code: x
DIM400XSM65-K000 8 / 8 caution: this device is sensitive to electrostatic discharge. users should follow esd handling procedu res. www.dynexsemi.com power assembly capability the power assembly group was set up to provide a su pport service for those customers requiring more th an the basic semiconductor, and has developed a flexible r ange of heatsink and clamping systems in line with advances in device voltages and current capability of our semic onductors. we offer an extensive range of air and liquid coole d assemblies covering the full range of circuit des igns in general use today. the assembly group offers high quality engineering support dedicated to designing new unit s to satisfy the growing needs of our customers. using the latest cad methods our team of design and applications engineers aim to provide the power as sembly complete solution (pacs). heatsinks the power assembly group has its own proprietary ra nge of extruded aluminium heatsinks which have been designed to optimise the performance of dynex semic onductors. data with respect to air natural, force d air and liquid cooling (with flow rates) is available on re quest. for further information on device clamps, heatsinks and assemblies, please contact your nearest sales representative or customer services. http://www.dynexsemi.com e-mail: power_solutions@dynexsemi.com headquarters operations customer service dynex semiconductor ltd tel: +44(0)1522 502753 / 502901. fax: +44(0)1522 50 0020 doddington road, lincoln lincolnshire, ln6 3lf. united kingdom. tel: +44(0)1522 500500 fax: +44(0)1522 500550 ? dynex semiconductor 2003 technical documentation C not for resale. produced in united kingdom. datasheet annotations: dynex semiconductor annotate datasheets in the top right hand corner of the front page, to indicate pr oduct status. the annotations are as follows:- target information: this is the most tentative form of information and represents a very preliminary specification. no actual design work on the product has been started. preliminary information: the product is in design and development. the data sheet represents the product as it is understood bu t details may change. advance information: the product design is complete and final characteri sation for volume production is well in hand. no annotation: the product parameters are fixed and the product is available to datasheet specification. this publication is issued to provide information only which (unless agreed by the company in writing) may n ot be used, applied or reproduced for any purpose nor f orm part of any order or contract nor to be regarded as a representation relatin g to the products or services concerned. no warranty or gu arantee express or implied is made regarding the capab ility, performance or suitability of any product or service. the company reserv es the right to alter without prior notice the specification, design or price of any product or service. information concerning possible methods of use is provided as a guide only and does not constitute any guarantee that such methods of use will be satisfactory in a specific piece of equipment. it is the u sers responsibility to fully determine the performance and suitability of any e quipment using such information and to ensure that any p ublication or data used is up to date and has not been superseded. these products are not suitable for use in any medical products whose failure to perform may result in significant inj ury or death to the user. all products and materials ar e sold and services provided subject to the companys conditions of sale, which are ava ilable on request. all brand names and product names used in this publicatio n are trademarks, registered trademarks or trade names of their respective owners.
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